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Hitachi Energy and Pakal Technologies Partner to Revolutionize Power Semiconductors
Hitachi Energy will integrate IGTO technology into high-voltage modules, reducing energy losses by 30 percent to enhance efficiency across renewables, AI, and rail.
www.hitachi.com
Hitachi Energy has entered a technical collaboration with Pakal Technologies to integrate the Insulated Gate Turn-Off (Thyristor), or IGTO(t), into its high-voltage power module portfolio. This integration targets critical infrastructure applications, including rail systems, renewable energy plants, energy storage facilities, and data center power architecture.
Advancements in High-Voltage Power Conversion
The collaboration addresses the requirement for increased efficiency within the digital supply chain of global energy systems. As the first major architectural shift in high-voltage silicon power semiconductors since the introduction of the Insulated Gate Bipolar Transistor (IGBT) in the 1980s, the IGTO(t) platform offers a 30% reduction in conduction losses at high current and temperature compared to standard IGBT devices.By utilizing these silicon power switches, Hitachi Energy intends to produce power semiconductor modules rated at ≥3.3 kV. The mechanical and electrical compatibility of the IGTO(t) with existing module architectures allows for a streamlined transition in manufacturing without requiring a complete redesign of the automotive data ecosystem or grid-scale power housings.
Technical Performance and System Impact
The primary benefit of the IGTO(t) technology lies in its thermal and electrical efficiency. In high-power applications, such as grid integration and heavy traction, energy loss manifests as heat, necessitating extensive cooling systems.
The 30% reduction in losses facilitates several technical advantages:
- Higher Power Density: Increased throughput within the same physical footprint of the power module.
- Reduced Thermal Management Requirements: Lower heat dissipation allows for smaller or less energy-intensive cooling subsystems.
- Enhanced Reliability: Operating at lower relative temperatures contributes to the long-term structural integrity of the semiconductor material.
According to Niklas Persson, Managing Director of Hitachi Energy’s Grid Integration business unit, the incorporation of the IGTO(t) into the company's semiconductor portfolio provides an opportunity to strengthen the global energy ecosystem. Ben Quinones, CEO of Pakal Technologies, noted that the IGTO(t) platform’s recognition by a high-volume manufacturer ensures the technology can scale to meet the demands of the electrification era.
Application in Critical Infrastructure
The deployment of these ≥3.3 kV modules is specifically geared toward heavy-duty cycles, where efficiency gains lead to measurable operational cost reductions. In data centers and AI infrastructure, where power consumption is a primary overhead, the cumulative daily efficiency gains from reduced conversion losses directly impact the total cost of ownership. Similarly, in renewable energy applications, such as offshore wind or large-scale solar, more efficient power inversion ensures a higher percentage of generated electricity reaches the grid.
www.hitachi.com
Application in Critical Infrastructure
The deployment of these ≥3.3 kV modules is specifically geared toward heavy-duty cycles, where efficiency gains lead to measurable operational cost reductions. In data centers and AI infrastructure, where power consumption is a primary overhead, the cumulative daily efficiency gains from reduced conversion losses directly impact the total cost of ownership. Similarly, in renewable energy applications, such as offshore wind or large-scale solar, more efficient power inversion ensures a higher percentage of generated electricity reaches the grid.
www.hitachi.com
