Mitsubishi Electric to Launch Two New XB Series HVIGBT Modules

Mitsubishi Electric Corporation announced the upcoming launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs). Scheduled for release on December 9, the new high-capacity power semiconductor modules are designed to deliver enhanced moisture resistance, enabling more efficient and reliable inverter performance in large industrial applications—including railcars—that operate in demanding or outdoor environments.

The company will showcase the new modules at the 40th Nepcon Japan R&D and Manufacturing Show in Tokyo from January 21–23, 2026, alongside additional exhibitions across North America, Europe, China, India, and other global locations.

The upgraded modules leverage Mitsubishi Electric’s proprietary RFC (Relaxed Field of Cathode) diode and CSTBT™ (Carrier-Stored Trench-Gate Bipolar Transistor) structures. Newly developed electric-field relaxation and surface-charge control technologies have allowed the company to shrink the termination region by approximately 30%, while achieving nearly 20× higher moisture resistance than existing products.

By boosting inverter efficiency and durability in variable operating conditions, these next-generation HVIGBT modules support more robust industrial systems and contribute to broader carbon-neutrality objectives.